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Atomic layer deposition of high-k dielectric layers on Ge and III-V MOS channels

dc.contributor.authorDelabie, Annelies
dc.contributor.authorCaymax, Matty
dc.contributor.authorBellenger, Florence
dc.contributor.authorBrammertz, Guy
dc.contributor.authorConard, Thierry
dc.contributor.authorHoussa, Michel
dc.contributor.authorSioncke, Sonja
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorHeyns, Marc
dc.contributor.authorMeuris, Marc
dc.contributor.authorBrunco, David
dc.contributor.authorvan Hemmen, J.L.
dc.contributor.authorKeuning, W.
dc.contributor.authorKessels, W.M.M.
dc.contributor.authorAfanas'ev, V.V.
dc.contributor.authorStesmans, Andre
dc.date.accessioned2021-10-17T06:52:23Z
dc.date.available2021-10-17T06:52:23Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13650
dc.sourceIIOimport
dc.titleAtomic layer deposition of high-k dielectric layers on Ge and III-V MOS channels
dc.typeMeeting abstract
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorStesmans, Andre
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage2449
dc.source.conference214th ECS Meeting
dc.source.conferencedate12/10/2008
dc.source.conferencelocationHonolulu, HI USA
imec.availabilityPublished - open access
imec.internalnotesECS Meeting Abstracts; Vol. MA 2008-02


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