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Double hard mask strategy for patterning 0.186 micron2 SRAM cells using FinFET technology

dc.contributor.authorDemand, Marc
dc.contributor.authorVeloso, Anabela
dc.contributor.authorBrus, Stephan
dc.contributor.authorDelvaux, Christie
dc.contributor.authorDe Backer, Johan
dc.contributor.authorErcken, Monique
dc.contributor.authorBoullart, Werner
dc.date.accessioned2021-10-17T06:52:46Z
dc.date.available2021-10-17T06:52:46Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13652
dc.sourceIIOimport
dc.titleDouble hard mask strategy for patterning 0.186 micron2 SRAM cells using FinFET technology
dc.typeProceedings paper
dc.contributor.imecauthorDemand, Marc
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorBrus, Stephan
dc.contributor.imecauthorDelvaux, Christie
dc.contributor.imecauthorDe Backer, Johan
dc.contributor.imecauthorErcken, Monique
dc.contributor.imecauthorBoullart, Werner
dc.contributor.orcidimecBoullart, Werner::0000-0001-7614-2097
dc.source.peerreviewyes
dc.source.beginpage23
dc.source.endpage24
dc.source.conference30th Dry Process Symposium
dc.source.conferencedate26/11/2008
dc.source.conferencelocationTokyo Japan
imec.availabilityPublished - imec


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