Effect of deposition and anneal temperature on batch-ALD deposited ZrO2/Al2O3/ZrO2 films for DRAM MIM capacitor applications
dc.contributor.author | Dilliway, G. | |
dc.contributor.author | Pierreux, D. | |
dc.contributor.author | Fischer, P. | |
dc.contributor.author | Menou, Nicolas | |
dc.contributor.author | Pawlak, Malgorzata | |
dc.contributor.author | Wang, Xin Peng | |
dc.contributor.author | Wouters, Dirk | |
dc.date.accessioned | 2021-10-17T06:55:37Z | |
dc.date.available | 2021-10-17T06:55:37Z | |
dc.date.issued | 2008 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/13668 | |
dc.source | IIOimport | |
dc.title | Effect of deposition and anneal temperature on batch-ALD deposited ZrO2/Al2O3/ZrO2 films for DRAM MIM capacitor applications | |
dc.type | Proceedings paper | |
dc.date.embargo | 9999-12-31 | |
dc.source.peerreview | no | |
dc.source.conference | 8th International Conference on Atomic Layer Deposition - ALD | |
dc.source.conferencedate | 29/06/2008 | |
dc.source.conferencelocation | Brugge Belgium | |
imec.availability | Published - open access |