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Effect of deposition and anneal temperature on batch-ALD deposited ZrO2/Al2O3/ZrO2 films for DRAM MIM capacitor applications

dc.contributor.authorDilliway, G.
dc.contributor.authorPierreux, D.
dc.contributor.authorFischer, P.
dc.contributor.authorMenou, Nicolas
dc.contributor.authorPawlak, Malgorzata
dc.contributor.authorWang, Xin Peng
dc.contributor.authorWouters, Dirk
dc.date.accessioned2021-10-17T06:55:37Z
dc.date.available2021-10-17T06:55:37Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13668
dc.sourceIIOimport
dc.titleEffect of deposition and anneal temperature on batch-ALD deposited ZrO2/Al2O3/ZrO2 films for DRAM MIM capacitor applications
dc.typeProceedings paper
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.conference8th International Conference on Atomic Layer Deposition - ALD
dc.source.conferencedate29/06/2008
dc.source.conferencelocationBrugge Belgium
imec.availabilityPublished - open access


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