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The importance of H-passivation for low-temperature APCVD silicon epitaxy

dc.contributor.authorMouche, M.J.
dc.contributor.authorCaymax, Matty
dc.contributor.authorBender, Hugo
dc.contributor.authorStorm, Wolfgang
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-09-29T15:14:03Z
dc.date.available2021-09-29T15:14:03Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1366
dc.sourceIIOimport
dc.titleThe importance of H-passivation for low-temperature APCVD silicon epitaxy
dc.typeProceedings paper
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorVandervorst, Wilfried
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage269
dc.source.endpage272
dc.source.conferenceProceedings of the 3rd International Symposium on Ultra Clean Processing of Silicon Surfaces - UCPSS
dc.source.conferencedate23/09/1996
dc.source.conferencelocationAntwerpen Belgium
imec.availabilityPublished - open access


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