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High aspect ratio via metallization for 3D integration using CVD TiN barrier and electrografted Cu seed

dc.contributor.authorDruais, Gael
dc.contributor.authorDilliway, Gabriela
dc.contributor.authorFischer, P.
dc.contributor.authorGuidotti, E.
dc.contributor.authorBureau, C.
dc.contributor.authorPalmans, Roger
dc.contributor.authorRadisic, Alex
dc.date.accessioned2021-10-17T06:57:28Z
dc.date.available2021-10-17T06:57:28Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13678
dc.sourceIIOimport
dc.titleHigh aspect ratio via metallization for 3D integration using CVD TiN barrier and electrografted Cu seed
dc.typeMeeting abstract
dc.contributor.imecauthorRadisic, Alex
dc.source.peerreviewno
dc.source.beginpage43
dc.source.endpage44
dc.source.conference17th Workshop Materials for Advanced Metallization
dc.source.conferencedate2/03/2008
dc.source.conferencelocationDresden Germany
imec.availabilityPublished - imec


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