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Evidence of the prominent role of the time-under-melt parameter in the reset switching of phase-change line cells

dc.contributor.authorGoux, Ludovic
dc.contributor.authorGille, Thomas
dc.contributor.authorTio Castro, David
dc.contributor.authorHurkx, Fred
dc.contributor.authorLisoni, Judit
dc.contributor.authorDelhougne, Romain
dc.contributor.authorGravesteijn, Dirk
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorAttenborough, Karen
dc.contributor.authorWouters, Dirk
dc.date.accessioned2021-10-17T07:21:59Z
dc.date.available2021-10-17T07:21:59Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13796
dc.sourceIIOimport
dc.titleEvidence of the prominent role of the time-under-melt parameter in the reset switching of phase-change line cells
dc.typeProceedings paper
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorDelhougne, Romain
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.source.peerreviewno
dc.source.beginpage37
dc.source.endpage38
dc.source.conferenceNon-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design - NVSMW/ICMTD
dc.source.conferencedate18/05/2008
dc.source.conferencelocationOpio France
imec.availabilityPublished - imec


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