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Defect creation stimulated by thermally activated hole trapping as the driving force behind negative bias temperature instability in SiO2, SiON, and high-k gate stacks

dc.contributor.authorGrasser, T.
dc.contributor.authorKaczer, Ben
dc.contributor.authorAichinger, T.
dc.contributor.authorGoes, W.
dc.contributor.authorNelhiebel, M.
dc.date.accessioned2021-10-17T07:23:42Z
dc.date.available2021-10-17T07:23:42Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13804
dc.sourceIIOimport
dc.titleDefect creation stimulated by thermally activated hole trapping as the driving force behind negative bias temperature instability in SiO2, SiON, and high-k gate stacks
dc.typeProceedings paper
dc.contributor.imecauthorKaczer, Ben
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage91
dc.source.endpage95
dc.source.conferenceIEEE Integrated Reliability Workshop - IRW
dc.source.conferencedate12/10/2008
dc.source.conferencelocationLake Tahoe, CA USA
imec.availabilityPublished - open access


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