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On the polarity dependence of oxide breakdown in MOS-devices with n+ and p+ polysilicon gate

dc.contributor.authorOgier, Jean-Luc
dc.contributor.authorDegraeve, Robin
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorMaes, Herman
dc.date.accessioned2021-09-29T15:14:44Z
dc.date.available2021-09-29T15:14:44Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1380
dc.sourceIIOimport
dc.titleOn the polarity dependence of oxide breakdown in MOS-devices with n+ and p+ polysilicon gate
dc.typeProceedings paper
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorGroeseneken, Guido
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage763
dc.source.endpage766
dc.source.conferenceProceedings of the 26th European Solid-State Device Research Conference - ESSDERC
dc.source.conferencedate9/09/1996
dc.source.conferencelocationBologna Italy
imec.availabilityPublished - open access


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