Skip to content
Institutional repository
Communities & Collections
Browse all items
Scientific publications
Open knowledge
Log In
imec Publications
Presentations
ESD sensitivity of 65-nm fully depleted SOI MOSFETs with different strain-inducing techniques
Publication:
ESD sensitivity of 65-nm fully depleted SOI MOSFETs with different strain-inducing techniques
Copy permalink
Date
2008
Presentation
Simple item page
Full metadata
Statistics
Loading...
Loading...
Files
17762.pdf
315.52 KB
Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Griffoni, A.
;
Tazzoli, A.
;
Gerardin, S.
;
Simoen, Eddy
;
Claeys, Cor
;
Meneghesso, G.
Journal
Abstract
Description
Metrics
Views
1939
since deposited on 2021-10-17
1
last month
Acq. date: 2025-12-10
Citations
Metrics
Views
1939
since deposited on 2021-10-17
1
last month
Acq. date: 2025-12-10
Citations