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ESD sensitivity of 65-nm fully depleted SOI MOSFETs with different strain-inducing techniques

dc.contributor.authorGriffoni, A.
dc.contributor.authorTazzoli, A.
dc.contributor.authorGerardin, S.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorMeneghesso, G.
dc.date.accessioned2021-10-17T07:24:58Z
dc.date.available2021-10-17T07:24:58Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13810
dc.sourceIIOimport
dc.titleESD sensitivity of 65-nm fully depleted SOI MOSFETs with different strain-inducing techniques
dc.typeOral presentation
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.conference2nd International Electrostatic Discharge Workshop
dc.source.conferencedate12/05/2008
dc.source.conferencelocationPort d'Albret France
imec.availabilityPublished - open access


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