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Dose enhancement due to interconnects in deep-submicron MOSFETs exposed to X-rays

dc.contributor.authorGriffoni, Alessio
dc.contributor.authorSilvestri, Marco
dc.contributor.authorGerardin, Simone
dc.contributor.authorMeneghesso, Gaudenzio
dc.contributor.authorPaccagnella, Alessandro
dc.contributor.authorKaczer, Ben
dc.contributor.authorde Potter de ten Broeck, Muriel
dc.contributor.authorVerbeeck, Rita
dc.contributor.authorNackaerts, Axel
dc.date.accessioned2021-10-17T07:25:41Z
dc.date.available2021-10-17T07:25:41Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13813
dc.sourceIIOimport
dc.titleDose enhancement due to interconnects in deep-submicron MOSFETs exposed to X-rays
dc.typeProceedings paper
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorde Potter de ten Broeck, Muriel
dc.contributor.imecauthorVerbeeck, Rita
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage432
dc.source.endpage437
dc.source.conference8th European Workshop on Radiation Effects on Components and Systems - RADECS
dc.source.conferencedate10/09/2008
dc.source.conferencelocationJyväskylä Finland
imec.availabilityPublished - imec


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