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Impact of strain on ESD robustness of FinFET devices

dc.contributor.authorGriffoni, Alessio
dc.contributor.authorThijs, Steven
dc.contributor.authorRuss, C.
dc.contributor.authorTrémouilles, David
dc.contributor.authorScholz, Mirko
dc.contributor.authorLinten, Dimitri
dc.contributor.authorCollaert, Nadine
dc.contributor.authorRooyackers, Rita
dc.contributor.authorDuvvury, C.
dc.contributor.authorGossner, H.
dc.contributor.authorMeneghesso, G.
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-17T07:26:11Z
dc.date.available2021-10-17T07:26:11Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13815
dc.sourceIIOimport
dc.titleImpact of strain on ESD robustness of FinFET devices
dc.typeProceedings paper
dc.contributor.imecauthorThijs, Steven
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecThijs, Steven::0000-0003-2889-8345
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage341
dc.source.endpage344
dc.source.conferenceTechnical Digest International Electron Devices Meeting - IEDM
dc.source.conferencedate15/12/2008
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - open access


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