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Influence of extensions implantation on selective epitaxial growth of Si used for production of FINFET raised source/drains

dc.contributor.authorHikavyy, Andriy
dc.contributor.authorCollaert, Nadine
dc.contributor.authorRooyackers, Rita
dc.contributor.authorLeys, Frederik
dc.contributor.authorLoo, Roger
dc.date.accessioned2021-10-17T07:41:25Z
dc.date.available2021-10-17T07:41:25Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13878
dc.sourceIIOimport
dc.titleInfluence of extensions implantation on selective epitaxial growth of Si used for production of FINFET raised source/drains
dc.typeProceedings paper
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.conference4th International SiGe Technology and Device Meeting - ISTDM
dc.source.conferencedate11/05/2008
dc.source.conferencelocationHsinchu Taiwan
imec.availabilityPublished - open access


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