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Application of HCl gas phase etch in the production of novel devices

dc.contributor.authorHikavyy, Andriy
dc.contributor.authorRooyackers, Rita
dc.contributor.authorVerheyen, Peter
dc.contributor.authorLeys, Frederik
dc.contributor.authorVellianitis, Georgios
dc.contributor.authorVan Dal, Mark
dc.contributor.authorLander, Rob
dc.contributor.authorLoo, Roger
dc.date.accessioned2021-10-17T07:41:55Z
dc.date.available2021-10-17T07:41:55Z
dc.date.issued2008-05
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13880
dc.sourceIIOimport
dc.titleApplication of HCl gas phase etch in the production of novel devices
dc.typeProceedings paper
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorVellianitis, Georgios
dc.contributor.imecauthorVan Dal, Mark
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage329
dc.source.endpage335
dc.source.conferenceAdvanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS. 4: New Materials, Processes, and Equipment
dc.source.conferencedate18/05/2008
dc.source.conferencelocationPhoenix, AZ USA
imec.availabilityPublished - open access
imec.internalnotesECS Transactions. Vol. 13, Issue 1


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