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X-ray and ToF-SIMS comparison of resistive switching NiO films obtained from controlled Ni thermal oxidation, e-beam and ALD

dc.contributor.authorLamperti, A.
dc.contributor.authorCourtade, Lorene
dc.contributor.authorLisoni, Judit
dc.contributor.authorGoux, Ludovic
dc.contributor.authorTurquat, C.
dc.contributor.authorSpiga, Sabina
dc.contributor.authorMuller, Christophe
dc.contributor.authorWouters, Dirk
dc.contributor.authorFanciulli, M.
dc.date.accessioned2021-10-17T08:08:54Z
dc.date.available2021-10-17T08:08:54Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13984
dc.sourceIIOimport
dc.titleX-ray and ToF-SIMS comparison of resistive switching NiO films obtained from controlled Ni thermal oxidation, e-beam and ALD
dc.typeOral presentation
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.source.peerreviewno
dc.source.conferenceE-MRS Spring Meeting Symposium H: Materials and Emerging Technologies fro Non-Volatile-Memory Devices
dc.source.conferencedate26/05/2008
dc.source.conferencelocationStrasbourg France
imec.availabilityPublished - imec


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