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Atomistic understanding of a single gated dopant atom in a MOSFET

dc.contributor.authorLansbergen, G.
dc.contributor.authorRahman, R.
dc.contributor.authorWellard, C.
dc.contributor.authorCaro, J.
dc.contributor.authorCollaert, Nadine
dc.contributor.authorBiesemans, Serge
dc.contributor.authorKlimeck, G.
dc.contributor.authorHollenberg, L.
dc.contributor.authorRogge, S.
dc.date.accessioned2021-10-17T08:09:10Z
dc.date.available2021-10-17T08:09:10Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13985
dc.sourceIIOimport
dc.titleAtomistic understanding of a single gated dopant atom in a MOSFET
dc.typeProceedings paper
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.source.peerreviewno
dc.source.beginpage1067-B03-07
dc.source.conferenceMaterials and Devices for "Beyond CMOS" Scaling
dc.source.conferencedate24/03/2008
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - imec
imec.internalnotesMRS Symposium Proceedings; 1067E


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