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dc.contributor.authorLansbergen, G.P.
dc.contributor.authorRahman, R.
dc.contributor.authorWellard, C.J.
dc.contributor.authorCaro, J.
dc.contributor.authorCollaert, Nadine
dc.contributor.authorBiesemans, Serge
dc.contributor.authorKlimeck, G.
dc.contributor.authorHollenberg, L.C.L.
dc.contributor.authorRogge, S.
dc.date.accessioned2021-10-17T08:09:28Z
dc.date.available2021-10-17T08:09:28Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13986
dc.sourceIIOimport
dc.titleTransport-based dopant metrology in advanced FinFETs
dc.typeProceedings paper
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage713
dc.source.endpage716
dc.source.conferenceTechnical Digest International Electron Devices Meeting - IEDM
dc.source.conferencedate15/12/2008
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - open access


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