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RTP requirements for CMOS integration of dual work function phase controlled Ni-FUSI (fully silicided) gates with simultaneous silicidation of nMOS (NiSi) and pMOS (Ni-rich silicide) gates on HfSiON
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1861 since deposited on 2021-10-17
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Acq. date: 2026-01-08
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Views
1861 since deposited on 2021-10-17
1last month
1last week
Acq. date: 2026-01-08
Citations