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Surface termination of HfO2 in W/HfO2 gated metal-oxide-semiconductor stacks from thermal stability point of view

dc.contributor.authorLi, Zilan
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorSchram, Tom
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorDe Meyer, Kristin
dc.date.accessioned2021-10-17T08:21:59Z
dc.date.available2021-10-17T08:21:59Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14031
dc.sourceIIOimport
dc.titleSurface termination of HfO2 in W/HfO2 gated metal-oxide-semiconductor stacks from thermal stability point of view
dc.typeOral presentation
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewno
dc.source.conference5th International Symposium on Advanced Gate Stack Technology
dc.source.conferencedate28/09/2008
dc.source.conferencelocationAustin, TX USA
imec.availabilityPublished - imec


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