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The influence of fluoride based gate etch process on the current collapse of AlGaN/GaN HEMTs

dc.contributor.authorLorenz, Anne
dc.contributor.authorJohn, Joachim
dc.contributor.authorDerluyn, Joff
dc.contributor.authorCheng, Kai
dc.contributor.authorDas, Jo
dc.contributor.authorGermain, Marianne
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-17T08:32:06Z
dc.date.available2021-10-17T08:32:06Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14065
dc.sourceIIOimport
dc.titleThe influence of fluoride based gate etch process on the current collapse of AlGaN/GaN HEMTs
dc.typeMeeting abstract
dc.contributor.imecauthorJohn, Joachim
dc.contributor.imecauthorBorghs, Gustaaf
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.conference32nd Workshop on Compound Semiconductor Devices and Integrated Circuits - WOCSDICE
dc.source.conferencedate18/05/2008
dc.source.conferencelocationLeuven Belgium
imec.availabilityPublished - open access


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