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On the dc and noise properties of the gate current in epitaxial Ge p-channel metal oxide semiconductor field effect transistors with TiN/TaN/HfO2/SiO2 gate stack
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1970 since deposited on 2021-10-17
3last month
2last week
Acq. date: 2026-01-12
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Views
1970 since deposited on 2021-10-17
3last month
2last week
Acq. date: 2026-01-12
Citations