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Development of a metal gate and silicon selective "dry ash only" process for combined extension and halo implanted photo resist

dc.contributor.authorMannaert, Geert
dc.contributor.authorBaklanov, Mikhaïl
dc.contributor.authorGoossens, Danny
dc.contributor.authorVrancken, Christa
dc.contributor.authorBoullart, Werner
dc.date.accessioned2021-10-17T08:46:15Z
dc.date.available2021-10-17T08:46:15Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14114
dc.sourceIIOimport
dc.titleDevelopment of a metal gate and silicon selective "dry ash only" process for combined extension and halo implanted photo resist
dc.typeProceedings paper
dc.contributor.imecauthorMannaert, Geert
dc.contributor.imecauthorGoossens, Danny
dc.contributor.imecauthorVrancken, Christa
dc.contributor.imecauthorBoullart, Werner
dc.contributor.orcidimecBoullart, Werner::0000-0001-7614-2097
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage113
dc.source.endpage116
dc.source.conferenceUltra Clean Processing of Semiconductor Surfaces VIII - UCPSS
dc.source.conferencedate17/09/2006
dc.source.conferencelocationAntwerpen Belgium
imec.availabilityPublished - open access
imec.internalnotesSolid State Phenomena; Vol. 134


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