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Preliminary reliability assessment of GaN-on-Si HEMT using in-situ Si3N4 cap layer

dc.contributor.authorMarcon, Denis
dc.contributor.authorLorenz, Anne
dc.contributor.authorDerluyn, Joff
dc.contributor.authorDas, Jo
dc.contributor.authorMedjdoub, Farid
dc.contributor.authorCheng, Kai
dc.contributor.authorDegroote, Stefan
dc.contributor.authorLeys, Maarten
dc.contributor.authorMertens, Robert
dc.contributor.authorGermain, Marianne
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-17T08:47:49Z
dc.date.available2021-10-17T08:47:49Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14119
dc.sourceIIOimport
dc.titlePreliminary reliability assessment of GaN-on-Si HEMT using in-situ Si3N4 cap layer
dc.typeMeeting abstract
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorMertens, Robert
dc.contributor.imecauthorBorghs, Gustaaf
dc.source.peerreviewno
dc.source.beginpage147
dc.source.endpage148
dc.source.conference17th European Heterostructure Technology Workshop - HETECH
dc.source.conferencedate3/11/2008
dc.source.conferencelocationVenice Italy
imec.availabilityPublished - imec


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