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Improved robustness of GaN-on-Si HEMTs under high electric field conditions by etching gate technology

dc.contributor.authorMarcon, Denis
dc.contributor.authorLorenz, Anne
dc.contributor.authorDerluyn, Joff
dc.contributor.authorDas, Jo
dc.contributor.authorMertens, Robert
dc.contributor.authorGermain, Marianne
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-17T08:48:08Z
dc.date.available2021-10-17T08:48:08Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14120
dc.sourceIIOimport
dc.titleImproved robustness of GaN-on-Si HEMTs under high electric field conditions by etching gate technology
dc.typeMeeting abstract
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorMertens, Robert
dc.contributor.imecauthorBorghs, Gustaaf
dc.source.peerreviewno
dc.source.beginpage143
dc.source.endpage144
dc.source.conference32nd Workshop on Compound Semiconductor Devices and Integrated Circuits - WOCSDICE
dc.source.conferencedate18/05/2008
dc.source.conferencelocationLeuven Belgium
imec.availabilityPublished - imec


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