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0.5 nm EOT low leakage ALD SrTiO3 on TiN MIM capacitors for DRAM applications

dc.contributor.authorMenou, Nicolas
dc.contributor.authorWang, Xin Peng
dc.contributor.authorKaczer, Ben
dc.contributor.authorPolspoel, Wouter
dc.contributor.authorPopovici, Mihaela Ioana
dc.contributor.authorOpsomer, Karl
dc.contributor.authorPawlak, Malgorzata
dc.contributor.authorKnaepen, W.
dc.contributor.authorDetavernier, C.
dc.contributor.authorBlomberg, T.
dc.contributor.authorPierreux, D.
dc.contributor.authorSwerts, Johan
dc.contributor.authorMaes, Jan
dc.contributor.authorFavia, Paola
dc.contributor.authorBender, Hugo
dc.contributor.authorBrijs, Bert
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorWouters, Dirk
dc.contributor.authorBiesemans, Serge
dc.contributor.authorKittl, Jorge
dc.date.accessioned2021-10-17T08:56:26Z
dc.date.available2021-10-17T08:56:26Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14147
dc.sourceIIOimport
dc.title0.5 nm EOT low leakage ALD SrTiO3 on TiN MIM capacitors for DRAM applications
dc.typeProceedings paper
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorPopovici, Mihaela Ioana
dc.contributor.imecauthorOpsomer, Karl
dc.contributor.imecauthorSwerts, Johan
dc.contributor.imecauthorMaes, Jan
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage929
dc.source.endpage632
dc.source.conferenceTechnical Digest International Electron Devices Meeting - IEDM
dc.source.conferencedate15/12/2008
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - open access


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