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Ni(Pt)Si thermal stability improvement by carbon implantation

dc.contributor.authorMertens, Sofie
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorVrancken, Christa
dc.contributor.authorJakschik, Stefan
dc.contributor.authorRichard, Olivier
dc.contributor.authorVerleysen, Eveline
dc.contributor.authorBender, Hugo
dc.contributor.authorZhao, Chao
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorAbsil, Philippe
dc.contributor.authorLauwers, Anne
dc.date.accessioned2021-10-17T09:02:23Z
dc.date.available2021-10-17T09:02:23Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14166
dc.sourceIIOimport
dc.titleNi(Pt)Si thermal stability improvement by carbon implantation
dc.typeProceedings paper
dc.contributor.imecauthorMertens, Sofie
dc.contributor.imecauthorVrancken, Christa
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorLauwers, Anne
dc.contributor.orcidimecMertens, Sofie::0000-0002-1482-6730
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.source.peerreviewno
dc.source.beginpage397
dc.source.endpage404
dc.source.conferenceAdvanced Gate Stack, Source/Drain, and Channel Engineering for Si-based CMOS 4: New Materials, Processes, and Equipment
dc.source.conferencedate18/05/2008
dc.source.conferencelocationPhoenix, AZ USA
imec.availabilityPublished - imec
imec.internalnotesECS Transactions; Vol. 13, 1


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