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Modeling and experiments of dopant diffusion and defects for laser annealed junctions and advanced USJ

dc.contributor.authorNoda, Taji
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorFelch, S.
dc.contributor.authorParihar, V.
dc.contributor.authorVrancken, Christa
dc.contributor.authorHoffmann, Thomas Y.
dc.date.accessioned2021-10-17T09:19:11Z
dc.date.available2021-10-17T09:19:11Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14220
dc.sourceIIOimport
dc.titleModeling and experiments of dopant diffusion and defects for laser annealed junctions and advanced USJ
dc.typeProceedings paper
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorVrancken, Christa
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage1070-E01-03
dc.source.conferenceDoping Engineering for Front-End Processing
dc.source.conferencedate24/03/2008
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - open access
imec.internalnotesMRS Symposium Proceedings; Vol. 1070


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