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Anomalous positive-bias temperature instability of high-k/metal gate nMOSFET devices with Dy2O3 capping

dc.contributor.authorO'Connor, Robert
dc.contributor.authorChang, Vincent
dc.contributor.authorPantisano, Luigi
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorO'Sullivan, Barry
dc.contributor.authorAdelmann, Christoph
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorLehnen, Peer
dc.contributor.authorYu, HongYu
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-17T09:24:31Z
dc.date.available2021-10-17T09:24:31Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14236
dc.sourceIIOimport
dc.titleAnomalous positive-bias temperature instability of high-k/metal gate nMOSFET devices with Dy2O3 capping
dc.typeProceedings paper
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorO'Sullivan, Barry
dc.contributor.imecauthorAdelmann, Christoph
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecO'Sullivan, Barry::0000-0002-9036-8241
dc.contributor.orcidimecAdelmann, Christoph::0000-0002-4831-3159
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage671
dc.source.endpage672
dc.source.conferenceIEEE International Reliability Physics Symposium Proceedings
dc.source.conferencedate27/04/2008
dc.source.conferencelocationPhoenix, AZ USA
imec.availabilityPublished - open access


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