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dc.contributor.authorPantisano, Luigi
dc.contributor.authorTrojman, Lionel
dc.contributor.authorMitard, Jerome
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorSeveri, Simone
dc.contributor.authorEneman, Geert
dc.contributor.authorCrupi, G.
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorFerain, Isabelle
dc.contributor.authorMeuris, Marc
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-17T09:34:37Z
dc.date.available2021-10-17T09:34:37Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14265
dc.sourceIIOimport
dc.titleFundamentals and extraction of velocity saturation in sub-100nm (110)-Si and (100)-Ge
dc.typeProceedings paper
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorSeveri, Simone
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage52
dc.source.endpage53
dc.source.conferenceSymposium on VLSI Technology. Digest of Technical Papers
dc.source.conferencedate17/06/2008
dc.source.conferencelocationHonolulu, HI USA
imec.availabilityPublished - open access


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