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Comparison between analog performance of standard and strained triple-gate nFinFETs

dc.contributor.authorPavanello, M. A.
dc.contributor.authorMartino, J. A.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorRooyackers, Rita
dc.contributor.authorCollaert, Nadine
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-17T09:41:33Z
dc.date.available2021-10-17T09:41:33Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14287
dc.sourceIIOimport
dc.titleComparison between analog performance of standard and strained triple-gate nFinFETs
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage131
dc.source.endpage132
dc.source.conferenceEUROSOI Workshop Proceedings: 4th Workshop of the Thematic Network on Silicon-on-Insulator Technology, Devices and Circuits
dc.source.conferencedate23/01/2008
dc.source.conferencelocationCork Ireland
imec.availabilityPublished - open access


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