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Atomistic modeling of impurity ion implantation in ultra-thin-body Si devices

dc.contributor.authorPelaz, L.
dc.contributor.authorDuffy, Ray
dc.contributor.authorAboy, M.
dc.contributor.authorMarques, L.
dc.contributor.authorLopez, P.
dc.contributor.authorSantos, I.
dc.contributor.authorPawlak, Bartek
dc.contributor.authorVan Dal, Mark
dc.contributor.authorDuriez, Blandine
dc.contributor.authorMerelle, Thomas
dc.contributor.authorDoornbos, Gerben
dc.contributor.authorCollaert, Nadine
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorRooyackers, Rita
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorJurczak, Gosia
dc.contributor.authorKaiser, M.
dc.contributor.authorWeemaes, R.
dc.contributor.authorVan Berkum, J.
dc.contributor.authorBreimer, P.
dc.contributor.authorLander, Rob
dc.date.accessioned2021-10-17T09:46:35Z
dc.date.available2021-10-17T09:46:35Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14302
dc.sourceIIOimport
dc.titleAtomistic modeling of impurity ion implantation in ultra-thin-body Si devices
dc.typeProceedings paper
dc.contributor.imecauthorPawlak, Bartek
dc.contributor.imecauthorVan Dal, Mark
dc.contributor.imecauthorDuriez, Blandine
dc.contributor.imecauthorDoornbos, Gerben
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.source.peerreviewno
dc.source.beginpage535
dc.source.endpage538
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate15/12/2008
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - imec


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