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N-type VT tuning by Te ion implantation in moly-based metal gates with high-k dielectric for fully depleted devices
Publication:
N-type VT tuning by Te ion implantation in moly-based metal gates with high-k dielectric for fully depleted devices
Date
2008
Proceedings Paper
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16917.pdf
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Petry, Jasmine
;
Boccardi, Guillaume
;
Xiong, K.
;
Mueller, Markus
;
Hooker, Jacob
;
Singanamalla, Raghunath
;
Collaert, Nadine
;
De Meyer, Kristin
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2029
since deposited on 2021-10-17
Acq. date: 2025-10-23
Citations
Metrics
Views
2029
since deposited on 2021-10-17
Acq. date: 2025-10-23
Citations