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Progressive degradation of TiN/SiON and TiN/HfO2 gate stack triple gate SOI nFinFETs subjected to electrical stress

dc.contributor.authorRafi, Joan Marc
dc.contributor.authorSimoen, Eddy
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorCollaert, Nadine
dc.contributor.authorCampabadal, Francesca
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-17T10:03:45Z
dc.date.available2021-10-17T10:03:45Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14353
dc.sourceIIOimport
dc.titleProgressive degradation of TiN/SiON and TiN/HfO2 gate stack triple gate SOI nFinFETs subjected to electrical stress
dc.typeOral presentation
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.source.peerreviewno
dc.source.conference15th Workshop on Dielectrics in Microelectronics - WoDIM
dc.source.conferencedate23/06/2008
dc.source.conferencelocationBad Saarow Germany
imec.availabilityPublished - imec


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