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Strained silicon on wafer level by wafer bonding: materials processing, strain measurements and strain relaxation

dc.contributor.authorReiche, M.
dc.contributor.authorMoutanabbir, O.
dc.contributor.authorHimcinschi, C.
dc.contributor.authorChristiansen, S.
dc.contributor.authorErfurth, E.
dc.contributor.authorGoesele, U.
dc.contributor.authorMantl, S.
dc.contributor.authorBuca, D.
dc.contributor.authorZhao, Q. T.
dc.contributor.authorLoo, Roger
dc.contributor.authorNguyen, Duy
dc.contributor.authorMuster, F.
dc.contributor.authorPetzold, M.
dc.date.accessioned2021-10-17T10:07:22Z
dc.date.available2021-10-17T10:07:22Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14364
dc.sourceIIOimport
dc.titleStrained silicon on wafer level by wafer bonding: materials processing, strain measurements and strain relaxation
dc.typeProceedings paper
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.beginpage311
dc.source.endpage320
dc.source.conferenceSemiconductor Wafer Bonding 10: Science, Technology, and Applications
dc.source.conferencedate12/10/2008
dc.source.conferencelocationHonolulu, HI USA
imec.availabilityPublished - imec
imec.internalnotesECS Transactions. Vol. 16, issue 8


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