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Impact of the high-temperature process steps on the HfAIO interpoly dielectric stacks for nonvolatile memory applications

dc.contributor.authorRuiz Aguado, Daniel
dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorFavia, Paola
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorVan Houdt, Jan
dc.date.accessioned2021-10-17T10:21:07Z
dc.date.available2021-10-17T10:21:07Z
dc.date.issued2008-03
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14404
dc.sourceIIOimport
dc.titleImpact of the high-temperature process steps on the HfAIO interpoly dielectric stacks for nonvolatile memory applications
dc.typeProceedings paper
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.source.peerreviewno
dc.source.beginpage1071-F02-05
dc.source.conferenceMaterials Science and Technology for Nonvolatile Memories
dc.source.conferencedate24/03/2008
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - imec
imec.internalnotesMRS Symposium Proceedings; Vol. 1071


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