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Laser annealing of double implanted layers for IGBT power devices

dc.contributor.authorSabatier, Clement
dc.contributor.authorRack, Simon
dc.contributor.authorBeseaucèle, Herve
dc.contributor.authorVenturini, Julien
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorRosseel, Erik
dc.contributor.authorSteenbergen, Johnny
dc.date.accessioned2021-10-17T10:22:32Z
dc.date.available2021-10-17T10:22:32Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14408
dc.sourceIIOimport
dc.titleLaser annealing of double implanted layers for IGBT power devices
dc.typeProceedings paper
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorSteenbergen, Johnny
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage177
dc.source.endpage181
dc.source.conference16th IEEE International Conference on Advanced Thermal Processing of Semiconductors - RTP
dc.source.conferencedate30/09/2008
dc.source.conferencelocationLas Vegas, NV USA
imec.availabilityPublished - open access


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