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Poly- silicon etch with diluted ammonia: Application to replacement gate integration scheme

dc.contributor.authorSebaai, Farid
dc.contributor.authordel Agua Borniquel, Jose Ignacio
dc.contributor.authorVos, Rita
dc.contributor.authorAbsil, Philippe
dc.contributor.authorChiarella, Thomas
dc.contributor.authorVrancken, Christa
dc.contributor.authorBoelen, Pieter
dc.contributor.authorEvans, Baiya
dc.date.accessioned2021-10-17T10:39:50Z
dc.date.available2021-10-17T10:39:50Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14456
dc.sourceIIOimport
dc.titlePoly- silicon etch with diluted ammonia: Application to replacement gate integration scheme
dc.typeOral presentation
dc.contributor.imecauthorSebaai, Farid
dc.contributor.imecauthordel Agua Borniquel, Jose Ignacio
dc.contributor.imecauthorVos, Rita
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorChiarella, Thomas
dc.contributor.imecauthorVrancken, Christa
dc.contributor.orcidimecChiarella, Thomas::0000-0002-6155-9030
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.conference9th International Symposium on Ultra Clean Processing of Semiconductor Surfaces - UCPSS
dc.source.conferencedate22/09/2008
dc.source.conferencelocationBrugge Belgium
imec.availabilityPublished - open access


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