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High hole mobility SGOI substrates obtained by the Ge condensation technique

dc.contributor.authorSouriau, Laurent
dc.contributor.authorNguyen, Tuan
dc.contributor.authorAugendre, Emmanuel
dc.contributor.authorLoo, Roger
dc.contributor.authorTerzieva, Valentina
dc.contributor.authorCaymax, Matty
dc.contributor.authorCristoloveanu, Sorin
dc.contributor.authorMeuris, Marc
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-17T10:57:00Z
dc.date.available2021-10-17T10:57:00Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14503
dc.sourceIIOimport
dc.titleHigh hole mobility SGOI substrates obtained by the Ge condensation technique
dc.typeProceedings paper
dc.contributor.imecauthorSouriau, Laurent
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorTerzieva, Valentina
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecSouriau, Laurent::0000-0002-5138-5938
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage79
dc.source.endpage89
dc.source.conferenceSiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices
dc.source.conferencedate12/10/2008
dc.source.conferencelocationHonolulu, HI USA
imec.availabilityPublished - open access
imec.internalnotesECS Transactions; Vol. 16, Issue 10


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