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Low temperature Si, SiGe, and Ge growth and atomic layer doping with B, P, and As on Si(001) by chemical vapor deposition

dc.contributor.authorTakeuchi, Shotaro
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-17T11:07:00Z
dc.date.available2021-10-17T11:07:00Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14531
dc.sourceIIOimport
dc.titleLow temperature Si, SiGe, and Ge growth and atomic layer doping with B, P, and As on Si(001) by chemical vapor deposition
dc.typeOral presentation
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.conferenceSeminar Low Temperature Chemical Vapor Deposition
dc.source.conferencedate15/12/2008
dc.source.conferencelocationOsaka Japan
imec.availabilityPublished - imec


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