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Difference in the nonlinear optical response of epitaxial Si on Ge(001) grown from SiH4 at 500 °C and from Si3H8 at 350 °C
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1984 since deposited on 2021-10-17
Acq. date: 2025-10-27
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Views
1984 since deposited on 2021-10-17
Acq. date: 2025-10-27
Citations