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Difference in the nonlinear optical response of epitaxial Si on Ge(001) grown from SiH4 at 500 °C and from Si3H8 at 350 °C

dc.contributor.authorValev, Ventsislav
dc.contributor.authorLeys, Frederik
dc.contributor.authorCaymax, Matty
dc.contributor.authorVerbiest, Thierry
dc.date.accessioned2021-10-17T11:30:20Z
dc.date.available2021-10-17T11:30:20Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14593
dc.sourceIIOimport
dc.titleDifference in the nonlinear optical response of epitaxial Si on Ge(001) grown from SiH4 at 500 °C and from Si3H8 at 350 °C
dc.typeOral presentation
dc.contributor.imecauthorCaymax, Matty
dc.source.peerreviewno
dc.source.conferenceE-MRS Spring Meeting Symposium J: Beyond Silicon Technology: Materials and Devices for Post-Si CMOS
dc.source.conferencedate26/05/2008
dc.source.conferencelocationStrasbourg France
imec.availabilityPublished - imec


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