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Analytical model for point and line tunneling in a tunnel field-effect transistor

dc.contributor.authorVandenberghe, William
dc.contributor.authorVerhulst, Anne
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorSoree, Bart
dc.contributor.authorMagnus, Wim
dc.date.accessioned2021-10-17T12:08:46Z
dc.date.available2021-10-17T12:08:46Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14694
dc.sourceIIOimport
dc.titleAnalytical model for point and line tunneling in a tunnel field-effect transistor
dc.typeProceedings paper
dc.contributor.imecauthorVerhulst, Anne
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorSoree, Bart
dc.contributor.imecauthorMagnus, Wim
dc.contributor.orcidimecVerhulst, Anne::0000-0002-3742-9017
dc.contributor.orcidimecSoree, Bart::0000-0002-4157-1956
dc.source.peerreviewno
dc.source.beginpage137
dc.source.endpage140
dc.source.conferenceInternational Conference on Simulation of Semiconductor Processes and Devices - SISPAD
dc.source.conferencedate9/09/2008
dc.source.conferencelocationHakone Japan
imec.availabilityPublished - imec


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