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Recombination activity of oxygen precipitation related defects in Si

dc.contributor.authorSeifert, W.
dc.contributor.authorKittler, M.
dc.contributor.authorVanhellemont, Jan
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorKirscht, F. G.
dc.date.accessioned2021-09-29T15:23:49Z
dc.date.available2021-09-29T15:23:49Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1471
dc.sourceIIOimport
dc.titleRecombination activity of oxygen precipitation related defects in Si
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage319
dc.source.endpage324
dc.source.conferenceDefect Recognition and Image Processing in Semiconductors - DRIP. Proceedings of the 6th International Conference
dc.source.conferencedate3/12/1995
dc.source.conferencelocationBoulder, CO USA
imec.availabilityPublished - open access
imec.internalnotesIOP Conference Proceedings; Vol. 149


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