Show simple item record

A comparison of intrinsic point defect properties in Si and Ge

dc.contributor.authorVanhellemont, J.
dc.contributor.authorSpiewak, P.
dc.contributor.authorSueoka, K.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorRomandic, I.
dc.date.accessioned2021-10-17T12:19:05Z
dc.date.available2021-10-17T12:19:05Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14720
dc.sourceIIOimport
dc.titleA comparison of intrinsic point defect properties in Si and Ge
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage1070-E6-05
dc.source.conferenceDoping Engineering for Front-End Processing
dc.source.conferencedate24/03/2008
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - open access
imec.internalnotesMRS Symposium Proceedings; Vol. 1070


Files in this item

Thumbnail
Name:
17112.pdf
Size:
242.0Kb
Format:
PDF
View/open

This item appears in the following collection(s)

Show simple item record