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Full-field EUV and immersion lithography integration in 0.186μm² FinFET 6T-SRAM cell

dc.contributor.authorVeloso, Anabela
dc.contributor.authorDemuynck, Steven
dc.contributor.authorErcken, Monique
dc.contributor.authorGoethals, Mieke
dc.contributor.authorDemand, Marc
dc.contributor.authorde Marneffe, Jean-Francois
dc.contributor.authorAltamirano Sanchez, Efrain
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorDelvaux, Christie
dc.contributor.authorDe Backer, Johan
dc.contributor.authorBrus, Stephan
dc.contributor.authorHermans, Jan
dc.contributor.authorBaudemprez, Bart
dc.contributor.authorVan Roey, Frieda
dc.contributor.authorLorusso, Gian
dc.contributor.authorBaerts, Christina
dc.contributor.authorGoossens, Danny
dc.contributor.authorVrancken, Christa
dc.contributor.authorMertens, Sofie
dc.contributor.authorVersluijs, Janko
dc.contributor.authorTruffert, Vincent
dc.contributor.authorHuffman, Craig
dc.contributor.authorLaidler, David
dc.contributor.authorHeylen, Nancy
dc.contributor.authorOng, Patrick
dc.contributor.authorParvais, Bertrand
dc.contributor.authorRakowski, Michal
dc.contributor.authorVerhaegen, Staf
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorMeiling, H.
dc.contributor.authorHultermans, B.
dc.contributor.authorRomijn, L.
dc.contributor.authorPigneret, C.
dc.contributor.authorLok, S.
dc.contributor.authorVan Dijk, A.
dc.contributor.authorShah, K.
dc.contributor.authorNoori, A.
dc.contributor.authorGelatos, J.
dc.contributor.authorArghavani, R.
dc.contributor.authorSchreutelkamp, Rob
dc.contributor.authorBoelen, Pieter
dc.contributor.authorRichard, Olivier
dc.contributor.authorBender, Hugo
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorCollaert, Nadine
dc.contributor.authorRooyackers, Rita
dc.contributor.authorAbsil, Philippe
dc.contributor.authorLauwers, Anne
dc.contributor.authorJurczak, Gosia
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorVanhaelemeersch, Serge
dc.contributor.authorCartuyvels, Rudi
dc.contributor.authorRonse, Kurt
dc.contributor.authorBiesemans, Serge
dc.date.accessioned2021-10-17T12:24:19Z
dc.date.available2021-10-17T12:24:19Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14732
dc.sourceIIOimport
dc.titleFull-field EUV and immersion lithography integration in 0.186μm² FinFET 6T-SRAM cell
dc.typeProceedings paper
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorDemuynck, Steven
dc.contributor.imecauthorErcken, Monique
dc.contributor.imecauthorDemand, Marc
dc.contributor.imecauthorde Marneffe, Jean-Francois
dc.contributor.imecauthorAltamirano Sanchez, Efrain
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.imecauthorDelvaux, Christie
dc.contributor.imecauthorDe Backer, Johan
dc.contributor.imecauthorBrus, Stephan
dc.contributor.imecauthorHermans, Jan
dc.contributor.imecauthorBaudemprez, Bart
dc.contributor.imecauthorVan Roey, Frieda
dc.contributor.imecauthorLorusso, Gian
dc.contributor.imecauthorBaerts, Christina
dc.contributor.imecauthorGoossens, Danny
dc.contributor.imecauthorVrancken, Christa
dc.contributor.imecauthorMertens, Sofie
dc.contributor.imecauthorVersluijs, Janko
dc.contributor.imecauthorTruffert, Vincent
dc.contributor.imecauthorLaidler, David
dc.contributor.imecauthorHeylen, Nancy
dc.contributor.imecauthorOng, Patrick
dc.contributor.imecauthorParvais, Bertrand
dc.contributor.imecauthorRakowski, Michal
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorLauwers, Anne
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorVanhaelemeersch, Serge
dc.contributor.imecauthorCartuyvels, Rudi
dc.contributor.imecauthorRonse, Kurt
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.contributor.orcidimecHermans, Jan::0000-0003-1249-8902
dc.contributor.orcidimecMertens, Sofie::0000-0002-1482-6730
dc.contributor.orcidimecTruffert, Vincent::0000-0001-7851-830X
dc.contributor.orcidimecLaidler, David::0000-0003-4055-3366
dc.contributor.orcidimecOng, Patrick::0000-0002-2072-292X
dc.contributor.orcidimecParvais, Bertrand::0000-0003-0769-7069
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecVanhaelemeersch, Serge::0000-0003-2102-7395
dc.contributor.orcidimecRonse, Kurt::0000-0003-0803-4267
dc.contributor.orcidimecde Marneffe, Jean-Francois::0000-0001-5178-6670
dc.contributor.orcidimecAltamirano Sanchez, Efrain::0000-0003-3235-6055
dc.contributor.orcidimecBrus, Stephan::0000-0003-3554-0640
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage861
dc.source.endpage864
dc.source.conferenceTechnical Digest International Electron Devices Meeting - IEDM
dc.source.conferencedate15/12/2008
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - imec


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