Strain enhanced nMOS using in-situ doped embedded Si:C S/D stressors with up to 1.5% substitutional carbon content grown using a novel deposition process

Thumbnail
Metadata
Show full item record
Authors
Verheyen, Peter; Kerner, Christoph; Clemente, Francesca; Bender, Hugo; Shamiryan, Denis; Loo, Roger; Hoffmann, Thomas Y.; Absil, Philippe; Biesemans, Serge; Lu, Jiong-Ping; Wise, Rick; Machkaoutsan, Vladimir; Bauer, Matthias; Weeks, Dorian; Thomas, Shawn
Conference
4th International SiGe Technology and Device Meeting
Title
Strain enhanced nMOS using in-situ doped embedded Si:C S/D stressors with up to 1.5% substitutional carbon content grown using a novel deposition process
Publication type
Proceedings paper
Collections