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Strain enhanced nMOS using in-situ doped embedded Si:C S/D stressors with up to 1.5% substitutional carbon content grown using a novel deposition process

dc.contributor.authorVerheyen, Peter
dc.contributor.authorKerner, Christoph
dc.contributor.authorClemente, Francesca
dc.contributor.authorBender, Hugo
dc.contributor.authorShamiryan, Denis
dc.contributor.authorLoo, Roger
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorAbsil, Philippe
dc.contributor.authorBiesemans, Serge
dc.contributor.authorLu, Jiong-Ping
dc.contributor.authorWise, Rick
dc.contributor.authorMachkaoutsan, Vladimir
dc.contributor.authorBauer, Matthias
dc.contributor.authorWeeks, Dorian
dc.contributor.authorThomas, Shawn
dc.date.accessioned2021-10-17T12:30:19Z
dc.date.available2021-10-17T12:30:19Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14745
dc.sourceIIOimport
dc.titleStrain enhanced nMOS using in-situ doped embedded Si:C S/D stressors with up to 1.5% substitutional carbon content grown using a novel deposition process
dc.typeProceedings paper
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorKerner, Christoph
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.imecauthorMachkaoutsan, Vladimir
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewyes
dc.source.conference4th International SiGe Technology and Device Meeting
dc.source.conferencedate11/05/2008
dc.source.conferencelocationHsinchu Taiwan
imec.availabilityPublished - imec


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