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Selective epitaxial growth of Ge on silicon wafers with shallow trench isolation: an approach for Ge virual substrates

dc.contributor.authorWang, Gang
dc.contributor.authorLeys, Frederik
dc.contributor.authorSouriau, Laurent
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.authorBrunco, D
dc.contributor.authorGeypen, Jef
dc.contributor.authorBender, Hugo
dc.contributor.authorMeuris, Marc
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-17T12:41:30Z
dc.date.available2021-10-17T12:41:30Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14772
dc.sourceIIOimport
dc.titleSelective epitaxial growth of Ge on silicon wafers with shallow trench isolation: an approach for Ge virual substrates
dc.typeProceedings paper
dc.contributor.imecauthorSouriau, Laurent
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorGeypen, Jef
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecSouriau, Laurent::0000-0002-5138-5938
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage829
dc.source.endpage836
dc.source.conferenceSiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices
dc.source.conferencedate12/10/2008
dc.source.conferencelocationHonolulu, HI USA
imec.availabilityPublished - open access


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