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Multiple-Vt FinFET devices through La2O3 dielectric capping

dc.contributor.authorWitters, Liesbeth
dc.contributor.authorVeloso, Anabela
dc.contributor.authorFerain, Isabelle
dc.contributor.authorDemand, Marc
dc.contributor.authorCollaert, Nadine
dc.contributor.authorSon, Nak Jin
dc.contributor.authorAdelmann, Christoph
dc.contributor.authorMeersschaut, Johan
dc.contributor.authorVos, Rita
dc.contributor.authorRohr, Erika
dc.contributor.authorWada, Masayuki
dc.contributor.authorSchram, Tom
dc.contributor.authorKubicek, Stefan
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorBiesemans, Serge
dc.contributor.authorJurczak, Gosia
dc.date.accessioned2021-10-17T12:48:53Z
dc.date.available2021-10-17T12:48:53Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14790
dc.sourceIIOimport
dc.titleMultiple-Vt FinFET devices through La2O3 dielectric capping
dc.typeProceedings paper
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorDemand, Marc
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorAdelmann, Christoph
dc.contributor.imecauthorMeersschaut, Johan
dc.contributor.imecauthorVos, Rita
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecAdelmann, Christoph::0000-0002-4831-3159
dc.contributor.orcidimecMeersschaut, Johan::0000-0003-2467-1784
dc.source.peerreviewno
dc.source.beginpage121
dc.source.endpage122
dc.source.conferenceIEEE International SOI Conference Proceedings
dc.source.conferencedate6/10/2008
dc.source.conferencelocationNew Paltz, NY USA
imec.availabilityPublished - imec


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