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Extraction of the interface and oxide charge density in silicon-on-insulator MOSFETs

dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorLukyanchikova, N.
dc.contributor.authorPetrichuk, M.
dc.contributor.authorGarbar, N.
dc.contributor.authorMartino, Joao Antonio
dc.contributor.authorSonnenberg, V.
dc.date.accessioned2021-09-29T15:25:33Z
dc.date.available2021-09-29T15:25:33Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1485
dc.sourceIIOimport
dc.titleExtraction of the interface and oxide charge density in silicon-on-insulator MOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage309
dc.source.endpage317
dc.source.conferenceProceedings of the 7th International Symposium on Silicon-on-Insulator Technology and Devices
dc.source.conferencedate5/05/1996
dc.source.conferencelocationLos Angeles, CA USA
imec.availabilityPublished - open access
imec.internalnotesECS Proceedings; Vol. 96-3


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